1800V bipolar-mode MOSFETs: A first application of silicon wafer direct bonding (SDB) technique to a power device

Publisher Website

1 January 1986

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1986.191128

Abstract

No abstract available

Keywords

This publication has 0 references indexed in Scilit: