The present paper describes a simple one-dimensional current model for an enhancement-insulated field-effect transistor (EIGFET), taking account of the carrier drift-velocity effect and short-channel effect. The model has been used for simulating various characteristics of an EIGFET of channel length of about 1 µm and up, and in the simulation of the waveforms of a ring oscillator where each element transistor has a 1-µm channel length. In either case, fairly good agreement was obtained between simulated results and measurements