A Comparison Of In/sub 0.5/Ga/sub 0.5/ / GaAs:C Single- And Double-heterojunction Bipolar Transistors Grown By Lp-mocvd
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 0_93-0_94
- https://doi.org/10.1109/drc.1992.671882
Abstract
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This publication has 1 reference indexed in Scilit:
- Calculated electron and hole steady-state drift velocities in lattice matched GaInP and AlGaInPJournal of Applied Physics, 1992