Unexpected Scaling of the Performance of Carbon Nanotube Transistors

Preprint

10 February 2003

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0302175

Abstract

We show that carbon nanotube transistors exhibit scaling that is qualitatively different than conventional transistors. The performance depends in an unexpected way on both the thickness and the dielectric constant of the gate oxide. Experimental measurements and theoretical calculations provide a consistent understanding of the scaling, which reflects the very different device physics of a Schottky barrier transistor with a quasi-one-dimensional channel contacting a sharp edge. A simple analytic model gives explicit scaling expressions for key device parameters such as subthreshold slope, turn-on voltage, and transconductance.

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All Related Versions

Version 1, 2003-02-10, ArXiv
Published version: Physical Review B, 68 (23), 235418.

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