Reflectivity and band structure of SnSe2
- 28 October 1977
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 10 (20) , 4155-4161
- https://doi.org/10.1088/0022-3719/10/20/025
Abstract
The results of the normal-incidence reflectivity measurements performed between 3.8 and 28 eV on tin diselenide crystals (SnSe2) are given. The analysis of the reflectivity data according to band structure calculations and photoemission results (XPS and UPS) provides fundamental information about electron and optical properties of SnSe2. For the interpretation of the reflectivity structures the most probable direct interband transitions are proposed.Keywords
This publication has 13 references indexed in Scilit:
- Valence-band density of states and chemical bonding for several non-transition-metal layer compounds: Sn, Pb, Bi, and GaSePhysical Review B, 1976
- Wavelength Modulation Spectra and Electronic Band Structure of SnS2 and SnSe2Physica Status Solidi (b), 1976
- Electronic charge densities for two layer semiconductors-SnS2and SnSe2Journal of Physics C: Solid State Physics, 1974
- Band structure and photoemission studies of SnS2and SnSe2. II. TheoreticalJournal of Physics C: Solid State Physics, 1973
- Nearly perfect single crystals of layer compounds grown by iodine vapour-transport techniquesJournal of Crystal Growth, 1972
- Electronic Energy-Band Structure of Snand SnPhysical Review B, 1972
- On the optical properties of some layer compoundsJournal of Physics and Chemistry of Solids, 1969
- Optical and electrical properties of SnSe2Journal of Physics D: Applied Physics, 1969
- Fundamental Optical Absorption in Snand SnPhysical Review B, 1966
- Preparation and optical properties of group IV–VI2 chalcogenides having the CdI2 structureJournal of Physics and Chemistry of Solids, 1965