Design and fabrication of high-speed GaAlAs/GaAs heterojunction transistors
- 1 June 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (6) , 1160-1164
- https://doi.org/10.1109/t-ed.1980.20000
Abstract
In this paper we present an analysis of the HF capabilities of GaAlAs/GaAs heterojunction transistors, a description of the technological characteristics of the samples processed by liquid-phase epitaxial technique for UHF applications, and a report of the experimental results already obtained.Keywords
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