Heterogeneity in hydrogenated silicon: Evidence for intermediately ordered chainlike objects

Abstract
Hydrogen (H2) dilution of the source gas is known to be a key factor in producing hydrogenated amorphous silicon films that demonstrate a high degree of optoelectronic stability. In this work, we investigate, using Raman spectroscopy and high-resolution transmission electron microscopy (TEM), whether microstructural differences exist between such films and those made with no H2 dilution (i.e., that have greater instabilities). The key variable is the H2 dilution, which ranges from none to very high levels, producing amorphous and microcrystalline silicon films. The TEM results show that embedded within the amorphous matrix are chainlike objects (CLO’s) having ∼3 nm widths, ∼30 nm lengths, and showing a high degree of order along their length. Such order implies vanishing levels of bond-angle distortion (BAD). These CLO’s are present in all samples investigated, but their density increases with the level of H2 dilution. The Raman spectra show a TO band centered at 490cm1 (37±3cm1 full width). Quantitative analysis shows this band to exist in all samples investigated, but increases in magnitude with increasing H2 dilution. In the highest dilutions when microcrystallites are observed, the band is distinctly evident. Its position and width are also consistent with very low (crystallinelike) levels of BAD ∼0°. It is thus likely the 490cm1 Raman band is a signature of the intermediate ordered CLO’s.