The Kinetics of Low Pressure Rapid Thermal Oxidation of Silicon
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Parallel Oxidation Mechanism for Si Oxidation in Dry O 2Journal of the Electrochemical Society, 1987
- A measurement of intrinsic SiO2 film stress resulting from low temperature thermal oxidation of SiJournal of Vacuum Science & Technology B, 1986
- Thermal Oxidation of Silicon in Dry Oxygen: Growth‐Rate Enhancement in the Thin Regime: II . Physical MechanismsJournal of the Electrochemical Society, 1985
- Growth kinetics of thin silicon dioxide in a controlled ambient oxidation systemApplied Physics Letters, 1984
- The Growth and Characterization of Very Thin Silicon Dioxide FilmsJournal of the Electrochemical Society, 1980
- Stress in thermal SiO2 during growthApplied Physics Letters, 1979