Stress Dependence of the Raman Spectrum of β‐Silicon Nitride
- 1 March 1996
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 79 (3) , 781-784
- https://doi.org/10.1111/j.1151-2916.1996.tb07944.x
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Deformation Bands in Ceria‐Stabilized Tetragonal Zirconia/Alumina: I, Measurement of Internal StressesJournal of the American Ceramic Society, 1995
- Measurement of residual stresses in sapphire fiber composites using optical fluorescenceActa Metallurgica et Materialia, 1993
- A technique for measuring residual stress in SiC whiskers within an alumina matrix through Raman spectroscopyJournal of Applied Physics, 1992
- Micro-Raman study of stress distribution in local isolation structures and correlation with transmission electron microscopyJournal of Applied Physics, 1992
- A Large Scale Processing Inhomogeneity in Silicon Nitride Ceramics and Its Effect on OxidationMaterials Science Forum, 1991
- Super-Tough Silicon Nitride with R-Curve BehaviorPublished by Wiley ,1989
- Preparation of High‐Density Si3N4 by a Gas‐Pressure Sintering ProcessJournal of the American Ceramic Society, 1981
- Stability of Si3N4 and Liquid Phase(s) During SinteringJournal of the American Ceramic Society, 1981
- Fracture Toughness of Si3N4 as a Function of the Initial α‐Phase ContentJournal of the American Ceramic Society, 1979
- Kinetics and Mechanism of the Thermal Decomposition of Si3N4Journal of the American Ceramic Society, 1973