Abstract
Research in the field of power devices has led to the development of power semiconductors that allow high switching frequencies Especially the IGBT (Insulated Gate Bipolar Transistor) is suitable for three-phase ac-to-dc converters in the medium power range (1kw to 100kw). Because of the high switching frequencies the harmonic contents of the line-side converter voltage can be kept small, which results in reduced line-side reactors compared to conventional converter system. Forfull exploitation of them capability of the new devices appropriate pulse width modulation (PWM) is necessary. This paper studied the reasons for line current distortion caused by a three-phase ac-to-dc converter in order in conclude the requirements for appropriate PWM schemes. Quality criteria for the selection of the best PWM schemes are presented. These quality criteria are then applied under consideration of minimum switching state time of the converter valves.

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