Effects of annealing InP(110) surfaces on Schottky barrier heights at Pd/InP(110) interfaces

Publisher Website
Google Scholar
Abstract
The InP(110) surface becomes phosphorus deficient with increasing annealing temperature up to 200 °C and recovers nearly the initial stoichiometry at about 350 °C. The Schottky barrier heights formed on these annealed surfaces using Pd show a good correlation with the phosphorus loss from the surface due to annealing. This band-bending study using photoemission spectroscopy suggests the following: (i) Annealing creates donor defects due to phosphorus loss from the surface with a level at about 0.6 eV above the valence-band maximum (VBM); (ii) Pd deposition on InP(110) creates some other defects at around 0.9 eV above the VBM as usual; (iii) the surface Fermi-level positions ranging from 0.62 to 0.9 eV above the VBM are determined by the balance of these interface defect-state densities.

This publication has 16 references indexed in Scilit: