Fluctuations and quantum domains in solid-state microdevices
- 1 December 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (11) , 4438-4439
- https://doi.org/10.1063/1.335536
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Two-dimensional transient simulation of an idealized high electron mobility transistorIEEE Transactions on Electron Devices, 1985
- Plasma domains in extrinsic GaAs and InPJournal of Physics and Chemistry of Solids, 1985
- Criteria for physical domains in laboratory and solid-state plasmasJournal of Applied Physics, 1984
- AN EFFICIENT TECHNIQUE FOR TWO‐DIMENSIONAL SIMULATION OF VELOCITY OVERSHOOT EFFECTS IN Si AND GaAs DEVICESCOMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 1982
- Transport Coefficients Determined Using the Shielded Coulomb PotentialPhysics of Fluids, 1959
- Correlation Energy of an Electron Gas at High DensityPhysical Review B, 1957
- The Statistical Mechanical Theory of Transport Processes. V. Quantum HydrodynamicsThe Journal of Chemical Physics, 1951
- Effects of the electron interaction on the energy levels of electrons in metalsTransactions of the Faraday Society, 1938
- On the Interaction of Electrons in MetalsPhysical Review B, 1934
- On the Quantum Correction For Thermodynamic EquilibriumPhysical Review B, 1932