Interacting donors inn-type GaP studied with Raman scattering and ESR techniques
- 15 May 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (10) , 6909-6915
- https://doi.org/10.1103/physrevb.33.6909
Abstract
Raman scattering and electron-spin-resonance (ESR) experiments have been performed on the same set of sulfur- and tellurium-doped gallium phosphide samples having various dopant concentrations. Impurity-related features of both Raman and ESR spectra indicate the presence of interactions between donors. The analysis of the data shows that these interactions are detected by Raman spectroscopy at a value of the mean distance between impurities significantly lower than that detected by the ESR technique.Keywords
This publication has 17 references indexed in Scilit:
- Phonons bound to sulphur complexes in GaPJournal of Physics C: Solid State Physics, 1984
- Raman Scattering in Alloy Semiconductors: "Spatial Correlation" ModelPhysical Review Letters, 1984
- Optical study of interacting donors in semiconductorsPhysical Review B, 1981
- The complex form of donor energy levels in gallium phosphideJournal of Physics C: Solid State Physics, 1977
- Infrared Absorption of Localized Longitudinal-Optical PhononsPhysical Review B, 1973
- Observation of Optical Phonons Bound to Neutral DonorsPhysical Review Letters, 1970
- Paramagnetic-Resonance Studies of S, Se, and Te Donor Impurities in GaPPhysical Review B, 1967
- Electron Spin Resonance in Phosphorus Doped Silicon at Low TemperaturesJournal of the Physics Society Japan, 1965
- Magnetism of Interacting DonorsPhysical Review B, 1960
- Exchange Narrowing in Paramagnetic ResonanceReviews of Modern Physics, 1953