Identification and characterization of precipitates in (Gd,Ho)-doped GaSb crystal
- 1 October 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 78 (1) , 105-112
- https://doi.org/10.1016/0022-0248(86)90506-3
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- The identification of precipitates in v-doped InP single crystalsJournal of Crystal Growth, 1984
- Identification of a new cobalt phosphide phase as a precipitate in LEC single crystal InPJournal of Crystal Growth, 1984
- Rare earth activated luminescence in InP, GaP and GaAsJournal of Crystal Growth, 1983
- Splitting of theandlevels in the rare-earth elements and their oxidesPhysical Review A, 1974