Direct measurement of localized joule heating in silicon devices by means of newly developed high resolution IR microscopy
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Lattice absorption bands observed in silicon by means of spectral emissivity measurementsJournal of Physics and Chemistry of Solids, 1962