Observation of quantum carrier confinement near Zn0.61Cd0.39Se/InP heterointerface

Abstract
We report on the experimental observation of quantum carrier confinement near the ZnCdSe/InP interface using the capacitance voltage profiling technique. Three subband states are identified at different spatial position‐expectation value. Type II band alignment between ZnCdSe and InP is determined. The conduction band discontinuity at the Zn0.61Cd0.39Se/InP heterointerface is estimated to be −102 meV.

This publication has 0 references indexed in Scilit: