Observation of quantum carrier confinement near Zn0.61Cd0.39Se/InP heterointerface
- 30 December 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (27) , 4200-4202
- https://doi.org/10.1063/1.116985
Abstract
We report on the experimental observation of quantum carrier confinement near the ZnCdSe/InP interface using the capacitance voltage profiling technique. Three subband states are identified at different spatial position‐expectation value. Type II band alignment between ZnCdSe and InP is determined. The conduction band discontinuity at the Zn0.61Cd0.39Se/InP heterointerface is estimated to be −102 meV.Keywords
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