Electrooptic effects in an InGaAs/InAlAs multiquantum well structure
- 1 October 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (10) , 1123-1126
- https://doi.org/10.1109/68.163753
Abstract
The field-induced refractive index change of an InGaAs/InAlAs MQW waveguide is examined for various wavelengths and TE/TM modes using a MZ modulator. The quadratic EO coefficients in the MQW waveguide for both TE and TM modes due to quantum confined Stark effect (QCSE) is on the order of 10/sup -18/ (m/sup 2//V/sup 2/), which is dominant compared with the linear EO effect. An effective linear EO effect, however, is significant because of the bias field arising from the built-in potential. This effect is more than one order greater than the conventional laser EO effect, which may suggest new device applications for QCSE.Keywords
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