Field-induced anisotropic distribution functions and semiconductor transport equations with tensor-form coefficients
- 15 November 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (10) , 5360-5362
- https://doi.org/10.1063/1.347032
Abstract
We propose a phenomenological method to extend isotropic nonequilibrium distribution functions in semiconductors into field-induced anisotropic forms. We show that the distribution functions which we derive for the Γ valley of GaAs compare favorably to more precise Monte Carlo simulations. A complete set of transport coefficients for the mancroscopic current continuity and energy flux equations is also derived. These transport coefficients should be helpful to study the range of applicability of various hydrodynamic models in ultrasmall devices.This publication has 3 references indexed in Scilit:
- The hot-electron problem in small semiconductor devicesJournal of Applied Physics, 1986
- High-field distribution function in GaAsIEEE Transactions on Electron Devices, 1966
- Diffusion of Hot and Cold Electrons in Semiconductor BarriersPhysical Review B, 1962