Turn-On Principles of the MOS-GTO
- 1 October 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. PE-2 (4) , 362-366
- https://doi.org/10.1109/tpel.1987.4307872
Abstract
MOS-GTO's (GTO thyristors which are turned off by the action of a MOS-gate) represent a new generation of controllable thyristors offering considerable advantages in turn-off behavior as compared to conventional GTO's. However, MOS-GTO's generally require one control electrode for turn-on and another control electrode for turn-off, which might be regarded as a disadvantage. It is shown that in MOS-GTO's with a p-channel cathode structure it is possible to turn the thyristor on and off by controlling just one MOS gate electrode. As a triggering current for turn-on, the MOS capacitor charging current is used.Keywords
This publication has 3 references indexed in Scilit:
- MOS GTO—A turn off thyristor with MOS-controlled emitter shortsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- MOS Controlled thyristors (MCT's)Published by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- Turn-off behaviour of GTO's: 2-D numerical results compared to IT-radiation patternsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983