Spatial control of quantum well intermixing in GaAs/AGlaAs using a one-step process
- 19 November 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (24) , 2240-2241
- https://doi.org/10.1049/el:19921440
Abstract
Dielectric cap disordering with strontium fluoride masking is used to provide a range of bandgap values in GaAs/AlGaAs quantum wells using a single annealing step. Partial area coverage by a strontium fluoride mask under a silica cap determines the amount of quantum well intermixing.Keywords
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