Grain boundary effects on transport in metalorganic chemical vapor deposition-grown, Ca-doped lanthanum manganites
- 1 June 1998
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (11) , 7055-7057
- https://doi.org/10.1063/1.367548
Abstract
The transport properties of metalorganic chemical vapor deposited films of lanthanum manganite grown on various substrates are investigated. The more disordered films show a magnetoresistance that is both large and relatively temperature independent over a wide temperature range. At low magnetic fields, a linear field dependence is observed and is attributed to spin-polarized intergrain tunneling. In addition, at low fields a hysteretic dependence of resistivity on the magnetic field has been observed. This effect has been attributed to the scattering of spin-polarized carriers at the grain boundary.This publication has 7 references indexed in Scilit:
- Influence of a 36.8° grain boundary on the magnetoresistance of La0.8Sr0.2MnO3−δ single crystal filmsApplied Physics Letters, 1997
- Effect of crystallinity on the magnetoresistance in perovskite manganese oxide thin filmsApplied Physics Letters, 1997
- Large low-field magnetoresistance in La0.7Ca0.3MnO3 induced by artificial grain boundariesNature, 1997
- Discrepancies between infrared and dc resistivities of samplesPhysical Review B, 1997
- Electronic Raman scattering from Mn exhibiting giant magnetoresistancePhysical Review B, 1996
- Spin-Polarized Intergrain Tunneling inPhysical Review Letters, 1996
- Effect of particle size on the giant magnetoresistance of La0.7Ca0.3MnO3Applied Physics Letters, 1996