Lattice match in the heteroepitaxy of III-V compound alloys
- 1 November 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (11) , 4606-4608
- https://doi.org/10.1063/1.1660974
Abstract
By using Pauling's tetrahedral covalent radii, the procedure for choosing the pair of a III‐V compound semiconductor and a III‐V alloy semiconductor with good lattice match is discussed in general. When a III‐V compound is given for a substrate crystal, the composition of the alloy to be grown with the best lattice match on the substrate is easily determined from the fundamental equations derived in this study. It is demonstrated that for the GaAs substrate the grown alloy should be AlxGa1−xAs (if the alloy contains no P), or AlxGa0.5−xIn0.5P (if the V atoms in the alloy are P atoms only).This publication has 9 references indexed in Scilit:
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