p-i-n photodiodes made in laser-recrystallized silicon-on-insulator
- 1 February 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 33 (2) , 203-205
- https://doi.org/10.1109/T-ED.1986.22466
Abstract
Lateral p-i-n photodiodes made in laser-recrystallized silicon-on-insulator are investigated. Dark reverse currents of 0.1 pA/µm are obtained (5-V reverse voltage), as well as an efficiency of more than 5 percent in the green part of the visible spectrum. The influence of a back gate (the mechanical substrate) on the intrinsic zone of the diode is discussed. The carrier lifetime is found to be approximately 8 µs in the intrinsic zone, and the photogenerated current is proportional to incident light power over more than 5 decades.Keywords
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