Extremely low specific contact resistivities for p-type GaSb, grown by molecular beam epitaxy
- 1 January 1995
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 13 (1) , 1-3
- https://doi.org/10.1116/1.587979
Abstract
We have investigated different metal contacts (Cr/Au, Ti/Pt/Au, and Au) on p-type GaSb, grown by the molecular beam epitaxy. For Au contacts, specific contact resistivities in the range of 1.4×10−8–7.8×10−8 Ω cm2 have been obtained. These are the lowest values ever reported for p-type GaSb. A simple procedure for surface preparation is also reported.Keywords
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