Characteristics of p -Ge/ N -GaAs heterojunctions grown by molecular beam epitaxy

28 September 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (20) , 1359-1360
https://doi.org/10.1049/el:19890908

Abstract

We report the nearly ideal electrical characteristics of p-Ge/N-GaAs heterojunction diodes grown by molecular beam epitaxy. The temperature and device size dependencies of the current-voltage characteristics have been investigated. At room temperature, unity ideality factor has been demonstrated over almost six decades of current.

Keywords

ROOM TEMPERATURE
NEARLY IDEAL ELECTRICAL CHARACTERISTICS
MOLECULAR BEAM EPITAXY
GE-GAAS HETEROJUNCTION DIODES
HETEROEPITAXY
UNITY IDEALITY FACTOR
MBE
DEVICE SIZE DEPENDENCIES
TEMPERATURE DEPENDENCE
SIX DECADES OF CURRENT
CURRENT-VOLTAGE CHARACTERISTICS
I/V CHARACTERISTICS

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