Observation of raman scattering by localized optical phonons bound to neutral donors in GaP:Si
- 31 August 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 55 (5) , 487-490
- https://doi.org/10.1016/0038-1098(85)90856-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Determination of the charge carrier concentration and mobility in n‐gap by Raman spectroscopyPhysica Status Solidi (b), 1983
- The complex form of donor energy levels in gallium phosphideJournal of Physics C: Solid State Physics, 1977
- Effect of uniaxial stress on the excitation spectrum of Si and S donors in GaPPhysical Review B, 1976
- Effect of hydrostatic pressure on the second order Raman spectrum of GaPSolid State Communications, 1973
- Observation of Optical Phonons Bound to Neutral DonorsPhysical Review Letters, 1970