Widegap a-Si:H films prepared at low substrate temperature

• 15 January 1997
• journal article
• Published by Elsevier in Solar Energy Materials and Solar Cells
• Vol. 45  (2) , 115-126
• https://doi.org/10.1016/s0927-0248(96)00030-x

Abstract

Keywords

• AMORPHOUS SILICON
• PECVD
• OPTOELECTRONIC PROPERTIES
• SCHOTTKY BARRIER SOLAR CELL