An advanced GaAs monolithic transimpedance amplifier for high‐speed optical communication systems

1 January 1993

journal article
research article
Published by Wiley in Microwave and Optical Technology Letters

Vol. 6 (1) , 65-70
https://doi.org/10.1002/mop.4650060117

Abstract

An advanced design procedure for MMIC GaAs direct‐coupled transimpedance amplifier for gigabit/second‐rate optical communication systems is presented. A transimpedance gain of 67 dBω up to 2.5 GHz has been demonstrated. A complete set of simulated and measured results are presented to confirm the effectiveness of the design approach. The design and the realization have been performed within the framework of ESPRIT Project No. 5018 COSMIC. © 1993 John Wiley & sons, Inc.

Keywords

This publication has 6 references indexed in Scilit:

Very High Performance d.c. Coupled MMIC FET Amplifiers
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1990
Broad-band GaAs monolithic equalizing amplifiers for multigigabit-per-second optical receivers
IEEE Transactions on Microwave Theory and Techniques, 1990
On the operation of cascode gain stages
IEEE Journal of Solid-State Circuits, 1988
A 3.2 GHz 26 dB wide-band monolithic matched GaAs MESFET feedback amplifier using cascodes
IEEE Transactions on Microwave Theory and Techniques, 1988
A High Speed GaAs Monolithic Transimpedance Amplifier
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1986
Receiver design for high-speed optical-fiber systems
Journal of Lightwave Technology, 1984