X-Ray Double Crystal Diffractometry of Multiple and Very Thin Heteroepitaxial Layers
- 1 January 1985
- journal article
- Published by Cambridge University Press (CUP) in Advances in X-ray Analysis
- Vol. 29, 337-343
- https://doi.org/10.1154/s0376030800010430
Abstract
The intense interest in production of heteroepitaxial quaternary structures of Gax In1-x Asy p1-y on InP for electro-optical telecommunications systems has Stimulated development of non-destructive techniques for their analysis. One of the most important is double axis X-ray diffractometry, a technique originally developed in the 1920s but only now coming into widespread use as a routine assessment tool. The basic theory is well treated by James and discussion of alignment errors are found in references cited by Fewster in a paper describing alignment procedures for the automated diffractometer manufactured by Bede Scientific Instruments of Durham, The application to III-V systems has been discussed by Tanner, Barnett and Bill.Keywords
This publication has 2 references indexed in Scilit:
- Alignment of double-crystal diffractometersJournal of Applied Crystallography, 1985
- The interpretation of X-ray rocking curves from III–V semiconductor device structuresJournal of Crystal Growth, 1984