Simplified analysis of body-contact effect for MOSFET/SOI
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (8) , 1391-1393
- https://doi.org/10.1109/16.2567
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Properties of ESFI MOS transistors due to the floating substrate and the finite volumeIEEE Transactions on Electron Devices, 1975
- Influence of the floating substrate potential on the characteristics of ESFI MOS transistorsSolid-State Electronics, 1975