Effect of precracking of organometallics and arsine on growth of GaAs
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 115 (1-4) , 221-225
- https://doi.org/10.1016/0022-0248(91)90742-n
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
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- 13C isotopic labeling studies of growth mechanisms in the metalorganic vapor phase epitaxy of GaAsJournal of Crystal Growth, 1988
- Numerical Analysis of Group-V Element Transport and Incorporation at a Growing Surface in MOCVD ReactorJapanese Journal of Applied Physics, 1987
- A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAsJournal of Crystal Growth, 1986