On the shot effect of p-n junctions
- 1 November 1952
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Transactions of the IRE Professional Group on Electron Devices
- Vol. PGED-1 (1) , 20-24
- https://doi.org/10.1109/irepged.1952.6811054
Abstract
Noise measurements on two p-n junctions, biased in the forward direction, have been carried out between 1 kc and 64 kc for a wide range of currents (0–1000 μA). Several other properties of the junction which might help in interpreting our noise data were also measured. Both junctions were almost identical.Keywords
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