Electron quantum wires in type II single heterostructures on nonplanar substrates

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Abstract
The existence of electronic quantum wires in the center of homogeneously doped single type II heterojunctions in V grooves is predicted. No additional structural confinement is needed. The valence and conduction band edges in such structures are calculated by solving the 2D-Poisson and 2D-Schrödinger equations self-consistently. As a prototype system we consider a realistic n-InP/n-InAlAs heterostructure in a V groove along [011̄] with a finite curvature. The band bending is found to depend on the position along the heterojunction, inducing two-dimensionally confined bound states for electrons which can serve as 1D conducting channels. Using proper doping conditions a ground state below the Fermi energy can be achieved. The subband separation is strongly dependent on the radius of curvature of the groove center and amounts to about 15 meV.

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