Many-body effects in the subband structure of Si-MOS inversion layer
- 1 May 1978
- journal article
- Published by Elsevier in Surface Science
- Vol. 73, 258-265
- https://doi.org/10.1016/0039-6028(78)90501-0
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Spectroscopy of surface space charge layersSurface Science, 1976
- Inversion layer mobility with intersubband scatteringSurface Science, 1976
- Many-body effects in the first excited subband of the n-inversion layer of SiSurface Science, 1976
- Density-functional calculation of sub-band structure in accumulation and inversion layersPhysical Review B, 1976
- Effect of the Electron-Electron Interaction on the Excitation Energies of an-Inversion Layer on SiPhysical Review Letters, 1975
- Electron Exchange Energy in Si Inversion LayersPhysical Review Letters, 1973
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Quantum statistics of fields and multiple production of mesonsIl Nuovo Cimento (1869-1876), 1957