Flat-band voltage dependence on channel length in short-channel threshold model

1 May 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 32 (5) , 1001-1002
https://doi.org/10.1109/T-ED.1985.22062

Abstract

This paper describes a modified short-channel threshold model that incorporates the flat-band voltage dependence on the channel length. Results obtained from the threshold voltage measurement on n-channel MOSFET's before and after total dose radiation are in good agreement with the proposed model.

Keywords

MODEL
AGREEMENT
FLAT
GOOD
CHANNEL LENGTH
VOLTAGE DEPENDENCE
MOSFET'S
BAND VOLTAGE

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