Solution of the continuity equation in planar symmetry cases and assessment of photoluminescence decay
- 15 August 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (4) , 1647-1650
- https://doi.org/10.1063/1.336055
Abstract
The decay of excess carriers induced in a semiconductor sample by a laser pulse is studied. The decay rate is proved to be independent of the spatial dependence of the hole-electron generation rate provoked by the laser beam. The effect of surface recombination can be minimized by waiting until the response drops to about 1% of its initial value. The accuracy of photoluminescence decay measurements of Auger lifetime is examined in view of this and other criteria developed here.This publication has 3 references indexed in Scilit:
- Effect of surface recombination on the decay of excess minority carriers in semiconductors induced by finely focused picosecond pulsed laser beamsJournal of Applied Physics, 1984
- Effect of surface recombination on the transient decay of excess carriers produced by short wavelength laser pulsesSolid-State Electronics, 1982
- Auger coefficients for highly doped and highly excited siliconApplied Physics Letters, 1977