Improvement of Gap-Filling Property of O3-tetraethylorthosilicate (TEOS) Film by Ethanol Surface Treatment
- 1 January 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (1A) , L110-112
- https://doi.org/10.1143/jjap.32.l110
Abstract
A new surface treatment involving spin coating of ethanol on substrate prior to O3-tetraethylorthosilicate (TEOS) deposition by atmospheric pressure chemical vapor deposition (APCVD) was found to be very effective for improvement of gap-filling properties and film quality. Deposited film has a “flowlike” surface shape similar to that of spin-on-glass (SOG) film, and can be used to fill trenches of 0.3 µm width and 1.2 µm height (aspect ratio of 4) which could not be filled by a conventional O3-TEOS APCVD. Effects of the surface treatment by some other organic solvents are also reported and a possible mechanism is presented.Keywords
This publication has 2 references indexed in Scilit:
- Mechanistic studies of dielectric thin film growth by low pressure chemical vapor deposition: The reaction of tetraethoxysilane with SiO2 surfacesJournal of Applied Physics, 1991
- Silicon Dioxide Deposition by Atmospheric Pressure and Low‐Temperature CVD Using TEOS and OzoneJournal of the Electrochemical Society, 1990