Planar termination for high-voltage p-n junctions
- 31 October 1986
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 29 (10) , 1035-1039
- https://doi.org/10.1016/0038-1101(86)90103-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- A proposed planar junction structure with near-ideal breakdown characteristicsIEEE Electron Device Letters, 1985
- Breakdown voltage optimization of silicon p-π-v planar junction diodesIEEE Transactions on Electron Devices, 1984
- Blocking capability of planar devices with field limiting ringsSolid-State Electronics, 1983
- Increased avalanche breakdown voltage and controlled surface electric fields using a junction termination extension (JTE) techniqueIEEE Transactions on Electron Devices, 1983
- High-voltage planar junction with a field-limiting ringSolid-State Electronics, 1982
- Theory and breakdown voltage for planar devices with a single field limiting ringIEEE Transactions on Electron Devices, 1977