Comparison of the microwave velocity/field characteristics of n type InP and n type GaAs

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Abstract
The velocity/field characteristic of n InP has been determined up to 24 kV/cm using a microwave-heating technique. For comparison, the velocity/field characteristic of n GaAs, measured in the same equipment, is also presented. For both InP and GaAs, the characteristic is compared with an experimental curve, determined from space-charge wave measurements, and with a theoretical curve. Information concerning relaxation effects of InP is obtained.