The temperature quenching of the 1.28 to 1.30 eV emission band in n-GaAs
- 16 May 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 23 (1) , K77-K81
- https://doi.org/10.1002/pssa.2210230158
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Effect of heat treatment on the 0.93, 1.0, and 1.28 ev luminescence bands in n-GaAsPhysica Status Solidi (a), 1973
- Evidence for Luminescence Involving Arsenic Vacancy-Acceptor Centers in-Type GaAsPhysical Review B, 1969
- Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor CenterPhysical Review B, 1968
- Recombination and Trapping Processes at Deep Centers in N-Type GaAsJapanese Journal of Applied Physics, 1967
- The 1.0- and 1.28-eV Emission from GaAs DiodesJournal of Applied Physics, 1966