Experimental evidence for the EBC-avalanche effect in a silicon diode
- 21 February 1975
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 8 (3) , 262-265
- https://doi.org/10.1088/0022-3727/8/3/010
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Theoretical optimization of EBS targetsIEEE Transactions on Electron Devices, 1974
- Electron bombardment conductivity of CdSJournal of Physics D: Applied Physics, 1974
- Electron drift velocity in avalanching silicon diodesIEEE Transactions on Electron Devices, 1967
- Electron beam switched P-N junctionsIEEE Transactions on Electron Devices, 1963
- The Electron Voltaic Effects in Silicon and Selenium ElementsProceedings of the Physical Society, 1961