A Localized Interaction Surface for Voltage-Sensing Domains on the Pore Domain of a K+ Channel
Open Access
- 1 February 2000
- Vol. 25 (2) , 411-423
- https://doi.org/10.1016/s0896-6273(00)80904-6
Abstract
No abstract availableKeywords
Funding Information
- National Institutes of Health
- National Institute of General Medical Sciences
This publication has 62 references indexed in Scilit:
- The Structure of the Potassium Channel: Molecular Basis of K + Conduction and SelectivityScience, 1998
- Voltage-Gated Ion Channels and Electrical ExcitabilityNeuron, 1998
- pH-Dependent Gating in the Streptomyces lividans K+ ChannelBiochemistry, 1998
- [19] Gating currentsPublished by Elsevier ,1998
- Characterizing Voltage-Dependent Conformational Changes in the K Channel with FluorescenceNeuron, 1997
- Scanning mutagenesis of the putative transmembrane segments of K ir 2.1, an inward rectifier potassium channelProceedings of the National Academy of Sciences, 1997
- Contribution of the S4 Segment to Gating Charge in the Shaker K+ ChannelNeuron, 1996
- Three distinct structural environments of a transmembrane domain in the inwardly rectifying potassium channel ROMK1 defined by perturbation.Proceedings of the National Academy of Sciences, 1995
- Purification and Characterization of Three Inhibitors of Voltage-Dependent K+ Channels from Leiurus Quinquestriatus var. Hebraeus VenomBiochemistry, 1994
- Interaction of Tetraethylammonium Ion Derivatives with the Potassium Channels of Giant AxonsThe Journal of general physiology, 1971