Device performance of ultra-violet emitting diodes grown by MBE
- 1 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 782-785
- https://doi.org/10.1016/s0022-0248(98)00293-0
Abstract
No abstract availableKeywords
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- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989