High-performance Al _0.48 In _0.52 As/Ga _0.47 In _0.53 As MSM-HEMT receiver OEIC grown by MOCVD on patterned InP substrates

9 November 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (23) , 1561-1563
https://doi.org/10.1049/el:19891049

Abstract

We report the first demonstration of a new long-wavelength receiver OEIC comprising an AlInAs/GaInAs MSM detector and an AlInAs/GalnAs HEMT preamplifier. The layer structure was grown by LP-MOCVD on patterned InP substrates, which allowed independent optimisation of the MSM detector and HEMT preamplifier. The MSM detector showed the lowest leakage current yet reported and the HEMT exhibited a transconductance of 260mS/mm. An excellent receiver response to l.7Gbit/s NRZ signals has been obtained.

Keywords

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Optoelectronic integrated circuits for high speed computer networks
Published by Optica Publishing Group ,1989

High-performance Al 0.48 In 0.52 As/Ga 0.47 In 0.53 As MSM-HEMT receiver OEIC grown by MOCVD on patterned InP substrates

Abstract

Keywords

High-performance Al _0.48 In _0.52 As/Ga _0.47 In _0.53 As MSM-HEMT receiver OEIC grown by MOCVD on patterned InP substrates