The Structure of GaAs/Si(211) Heteroepitaxial Layers
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substratesApplied Physics Letters, 1987
- Properties of MODFET's grown on Si substrates at DC and microwave frequenciesIEEE Transactions on Electron Devices, 1986
- Dislocation reduction in epitaxial GaAs on Si(100)Applied Physics Letters, 1986
- Observation of GaAs/Si Epitaxial Interfaces by Atomic Resolution Electron MicroscopyMRS Proceedings, 1986
- MBE Growth of GaAs on Si: Problems and ProgressMRS Proceedings, 1986
- Molecular beam epitaxial growth of GaAs on Si(211)Journal of Applied Physics, 1985
- Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) SubstrateJapanese Journal of Applied Physics, 1984
- Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) siliconElectronics Letters, 1984