Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
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- 23 May 2003
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 300 (5623) , 1269-1272
- https://doi.org/10.1126/science.1083212
Abstract
We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO 3 (ZnO) 5 , as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of ∼10 6 and a field-effect mobility of ∼80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.Keywords
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