The X3Π, B3Σ+and C3Π states of SiC according to ab initio CASSCF-CCI calculations
- 28 April 1986
- journal article
- Published by IOP Publishing in Journal of Physics B: Atomic and Molecular Physics
- Vol. 19 (8) , L261-L265
- https://doi.org/10.1088/0022-3700/19/8/001
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Electronic structure of the SiP+radical on the basis ofab initioMRD-CI calculationsMolecular Physics, 1984
- The Ballik-Ramsay, Mulliken, Deslandres-d'Azambuja and Phillips systems in C2: a theoretical study of their electronic transition momentsChemical Physics, 1983
- Low-lying electronic states of CSi-and electron affinity of CSi according to ab initio MRD-CI calculationsJournal of Physics B: Atomic and Molecular Physics, 1983
- Ab initioMRD-CI study of the electronic spectrum of SiHMolecular Physics, 1983
- Laser vaporization of silicon carbide. Lifetime and spectroscopy of silicon carbide (SiC2)The Journal of Physical Chemistry, 1982
- Theoretical prediction of the potential curves for the lowest-lying states of the CSi+ and Si2+ molecular ionsThe Journal of Chemical Physics, 1981
- Theoretical prediction of the potential curves for the lowest-lying states of the isovalent diatomics CN+, Si2, SiC, CP+, and SiN+ using the a b i n i t i o MRD-CI methodThe Journal of Chemical Physics, 1980
- Silicon carbide - Its ground state and predicted spectrumThe Astrophysical Journal, 1974
- Gaussian Basis Functions for Use in Molecular Calculations. I. Contraction of (9s5p) Atomic Basis Sets for the First-Row AtomsThe Journal of Chemical Physics, 1970
- Gaussian-Type Functions for Polyatomic Systems. IThe Journal of Chemical Physics, 1965