The Schottky barrier height at the NiSi2-Si(111) interface
- 1 May 1989
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (5) , 412-415
- https://doi.org/10.1088/0268-1242/4/5/014
Abstract
The authors have calculated the Schottky barrier heights for the type A and type B NiSi2-Si(111) interfaces. They have found that varying the amount of relaxation of the NiSi2-Si interplanar distance at the type B interface leads to a change in the barrier height of about 20%.Keywords
This publication has 14 references indexed in Scilit:
- STM applications for semiconductor materials and devicesSurface Science, 1987
- Geometric structure of the NiSi2Si(111) interface: An X-ray standing-wave analysisSurface Science, 1986
- Theoretical studies of metal disilicide–silicon interfacesPhysical Review B, 1986
- Calculation of Schottky barrier heights from semiconductor band structuresSurface Science, 1986
- Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor InterfacesPhysical Review Letters, 1984
- Electronic structure of vanadium silicidesPhysical Review B, 1982
- Transition metal silicides: aspects of the chemical bond and trends in the electronic structureJournal of Physics C: Solid State Physics, 1981
- A simple approach to heterojunctionsJournal of Physics C: Solid State Physics, 1977
- Electronic structure of a metal-semiconductor interfacePhysical Review B, 1976
- Self-Consistent Pseudopotential Calculation for a Metal-Semiconductor InterfacePhysical Review Letters, 1975