Study of n-InxGa1−xAs/n-GaAs heterojunction epilayers

Publisher Website
Google Scholar
Abstract
Isotype heterostructures of n‐InxGa1−xAs on n‐GaAs substrates have been grown by molecular‐beam epitaxy (MBE) for the composition range x=0–0.15 and thickness about 1 μm. Photoluminescence measurements for the InGaAs have been made at 77 and 4.9 K. X‐ray diffraction measurements have provided information on the composition x, and the variation of the band gap at 4.9 K with x is compared with that obtained for liquid phase epitaxy (LPE) InGaAs layers at 300 K. The apparent electron carrier concentrations (in the 1016 cm−3 range) from capacitance–voltage (CV) profiling with a Schottky barrier on the InxGa1−xAs have been examined for the temperature range 77–300 K. Rather than the expected electron depletion dip in the GaAs followed by an accumulation peak in the InGaAs region close to the interface, we find two accumulation peaks that undergo substantial changes in the temperature range 190–160 K. Deep level transient spectroscopy characteristics show five electron traps of which one at Ec−0.13 eV is not typical of GaAs and may be InGaAs or interface related.

This publication has 0 references indexed in Scilit: