GaAs metal-semiconductor field-effect transistor with extremely low resistance nonalloyed ohmic contacts using an InAs/GaAs superlattice
- 21 August 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (8) , 775-776
- https://doi.org/10.1063/1.101803
Abstract
GaAs metal-semiconductor field-effect transistors (MESFETs) with extremely low resistance nonalloyed ohmic contacts have been demonstrated. The contact structure consists of an n+-InAs/GaAs strained-layer superlattice and an InAs cap layer. Contact resistances as low as 0.036 Ω mm have been measured. These results represent the smallest figures reported to date for GaAs field-effect transistors. Nonalloyed MESFETs with 1 μm gate lengths had transconductances of about 210 mS/mm.Keywords
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